Dual N/P-Channel-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 Vishay SI1029X-T1-GE3

RS Stock No.:: 787-9055
Mfr. Part No.:: SI1029X-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 Vishay SI1029X-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 20)

SGD0.526

(exc. GST)

SGD0.573

(inc. GST)

1620 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
20 - 40	SGD0.526	SGD10.52
60 - 80	SGD0.506	SGD10.12
100 +	SGD0.474	SGD9.48

**price indicative

RS Stock No.:: 787-9055
Mfr. Part No.:: SI1029X-T1-GE3
Manufacturer:: Vishay

Si1029X, Complementary N- and P-Channel 60V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	190 mA, 300 mA
Maximum Drain Source Voltage	60 V
Package Type	SOT-523 (SC-89)
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	3 Ω, 8 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	250 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	1700 nC @ 15 V, 750 nC @ 4.5 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	1.7mm
Width	1.7mm
Minimum Operating Temperature	-55 °C
Height	0.6mm

Dual N/P-Channel-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 Vishay SI1029X-T1-GE3

Dual N/P-Channel MOSFET, Vishay Semiconductor

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