Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363 SIA449DJ-T1-GE3

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 20 units)*

SGD10.84

(exc. GST)

SGD11.82

(inc. GST)

Add to Basket
Select or type quantity
Being discontinued
  • Final 2,920 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
20 - 280SGD0.542SGD10.84
300 - 580SGD0.515SGD10.30
600 - 1480SGD0.489SGD9.78
1500 - 2980SGD0.464SGD9.28
3000 +SGD0.441SGD8.82

*price indicative

Packaging Options:
RS Stock No.:
814-1213
Mfr. Part No.:
SIA449DJ-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.038Ω

Channel Mode

Enhancement

Forward Voltage Vf

-0.8V

Typical Gate Charge Qg @ Vgs

23.1nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

19W

Maximum Operating Temperature

150°C

Length

2.15mm

Width

2.15 mm

Standards/Approvals

RoHS

Height

0.8mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links