P-Channel MOSFET, 10.4 A, 30 V, 6-Pin SOT-363 Vishay SIA449DJ-T1-GE3

RS Stock No.:: 814-1213
Mfr. Part No.:: SIA449DJ-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 10.4 A, 30 V, 6-Pin SOT-363 Vishay SIA449DJ-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 20)

SGD0.535

(exc. GST)

SGD0.583

(inc. GST)

3000 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
20 - 280	SGD0.535	SGD10.70
300 - 580	SGD0.508	SGD10.16
600 - 1480	SGD0.483	SGD9.66
1500 - 2980	SGD0.459	SGD9.18
3000 +	SGD0.436	SGD8.72

**price indicative

RS Stock No.:: 814-1213
Mfr. Part No.:: SIA449DJ-T1-GE3
Manufacturer:: Vishay

SiA449DJ, P-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	10.4 A
Maximum Drain Source Voltage	30 V
Package Type	SOT-363
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	38 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.6V
Maximum Power Dissipation	19 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-12 V, +12 V
Width	2.15mm
Typical Gate Charge @ Vgs	48 nC @ 10 V
Length	2.15mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Height	0.8mm
Minimum Operating Temperature	-55 °C

P-Channel MOSFET, 10.4 A, 30 V, 6-Pin SOT-363 Vishay SIA449DJ-T1-GE3

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor

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