Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363

This image is representative of the product range

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
165-7182
Mfr. Part No.:
SIA449DJ-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-363

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.038Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

23.1nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12 V

Forward Voltage Vf

-0.8V

Maximum Power Dissipation Pd

19W

Maximum Operating Temperature

150°C

Width

2.15 mm

Standards/Approvals

RoHS

Height

0.8mm

Length

2.15mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links