N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 Vishay SI1012CR-T1-GE3

RS Stock No.:: 787-9005
Mfr. Part No.:: SI1012CR-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 Vishay SI1012CR-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (On a Tape of 20)**

SGD0.296

(exc. GST)

SGD0.323

(inc. GST)

Temporarily out of stock - back order for despatch 17/04/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Tape**
20 - 20	SGD0.296	SGD5.92
40 - 80	SGD0.281	SGD5.62
100 - 180	SGD0.267	SGD5.34
200 - 380	SGD0.254	SGD5.08
400 +	SGD0.241	SGD4.82

**price indicative

RS Stock No.:: 787-9005
Mfr. Part No.:: SI1012CR-T1-GE3
Manufacturer:: Vishay

Si1012CR, N-Channel 20V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	630 mA
Maximum Drain Source Voltage	20 V
Package Type	SOT-416 (SC-75A)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.1 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	240 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Number of Elements per Chip	1
Length	1.68mm
Width	0.86mm
Transistor Material	Si
Typical Gate Charge @ Vgs	1.3 nC @ 8 V
Maximum Operating Temperature	+150 °C
Height	0.8mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 Vishay SI1012CR-T1-GE3

FREE delivery for orders over SGD250.00 (ex GST)

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

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