onsemi NTA4001N Type N-Channel MOSFET, 240 mA, 20 V Enhancement, 3-Pin SC-75 NTA4001NT1G
- RS Stock No.:
- 780-0494
- Mfr. Part No.:
- NTA4001NT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 100 units)*
SGD10.90
(exc. GST)
SGD11.90
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Supply shortage
- 3,000 left, ready to ship from another location
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Tape* |
|---|---|---|
| 100 - 100 | SGD0.109 | SGD10.90 |
| 200 - 400 | SGD0.106 | SGD10.60 |
| 500 - 900 | SGD0.104 | SGD10.40 |
| 1000 - 1900 | SGD0.102 | SGD10.20 |
| 2000 + | SGD0.10 | SGD10.00 |
*price indicative
- RS Stock No.:
- 780-0494
- Mfr. Part No.:
- NTA4001NT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 240mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | NTA4001N | |
| Package Type | SC-75 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±10 V | |
| Maximum Power Dissipation Pd | 300mW | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Width | 0.9 mm | |
| Length | 1.65mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 240mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series NTA4001N | ||
Package Type SC-75 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±10 V | ||
Maximum Power Dissipation Pd 300mW | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Width 0.9 mm | ||
Length 1.65mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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