onsemi NTA Type N-Channel MOSFET, 915 mA, 20 V Enhancement, 3-Pin SC-75 NTA4153NT1G
- RS Stock No.:
- 773-7872
- Mfr. Part No.:
- NTA4153NT1G
- Manufacturer:
- onsemi
This image is representative of the product range
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View bulk pricing optionSubtotal (1 pack of 10 units)*
SGD2.23
(exc. GST)
SGD2.43
(inc. GST)
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In Stock
- 590 unit(s) ready to ship from another location
- Plus 33,470 unit(s) shipping from 05 June 2026
- Plus 3,000 unit(s) shipping from 13 August 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD0.223 | SGD2.23 |
| 20 - 40 | SGD0.219 | SGD2.19 |
| 50 - 90 | SGD0.215 | SGD2.15 |
| 100 - 190 | SGD0.211 | SGD2.11 |
| 200 + | SGD0.207 | SGD2.07 |
*price indicative
- RS Stock No.:
- 773-7872
- Mfr. Part No.:
- NTA4153NT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 915mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | NTA | |
| Package Type | SC-75 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.82nC | |
| Maximum Power Dissipation Pd | 300mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 0.8mm | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 915mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series NTA | ||
Package Type SC-75 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.82nC | ||
Maximum Power Dissipation Pd 300mW | ||
Maximum Operating Temperature 150°C | ||
Length 0.8mm | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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