DiodesZetex DMG1012T-7 Type N-Channel MOSFET, 630 mA, 20 V Enhancement, 3-Pin SC-89
- RS Stock No.:
- 922-8367
- Mfr. Part No.:
- DMG1012T-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
SGD237.00
(exc. GST)
SGD258.00
(inc. GST)
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In Stock
- Plus 36,000 unit(s) shipping from 29 December 2025
- Plus 456,000 unit(s) shipping from 05 January 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | SGD0.079 | SGD237.00 |
| 9000 - 15000 | SGD0.076 | SGD228.00 |
| 18000 + | SGD0.071 | SGD213.00 |
*price indicative
- RS Stock No.:
- 922-8367
- Mfr. Part No.:
- DMG1012T-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 630mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-89 | |
| Series | DMG1012T-7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.74nC | |
| Maximum Power Dissipation Pd | 280mW | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 0.85 mm | |
| Height | 0.8mm | |
| Length | 1.7mm | |
| Automotive Standard | AEC-Q104, AEC-Q200, AEC-Q100, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 630mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-89 | ||
Series DMG1012T-7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.74nC | ||
Maximum Power Dissipation Pd 280mW | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 0.85 mm | ||
Height 0.8mm | ||
Length 1.7mm | ||
Automotive Standard AEC-Q104, AEC-Q200, AEC-Q100, AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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