Infineon BSS Type P-Channel MOSFET, 630 mA, -20 V Enhancement, 3-Pin SOT-323 BSS209PWH6327XTSA1
- RS Stock No.:
- 250-0554
- Mfr. Part No.:
- BSS209PWH6327XTSA1
- Manufacturer:
- Infineon
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SGD2.16
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SGD2.35
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD0.216 | SGD2.16 |
| 20 - 90 | SGD0.195 | SGD1.95 |
| 100 - 240 | SGD0.175 | SGD1.75 |
| 250 - 490 | SGD0.156 | SGD1.56 |
| 500 + | SGD0.141 | SGD1.41 |
*price indicative
- RS Stock No.:
- 250-0554
- Mfr. Part No.:
- BSS209PWH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 630mA | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | SOT-323 | |
| Series | BSS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 550mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 630mA | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type SOT-323 | ||
Series BSS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 550mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSS Series MOSFET, 20V Maximum Drain-Source Voltage, 0.63A Maximum Continuous Drain Current - BSS209PWH6327XTSA1
This MOSFET is a P-channel enhancement-mode transistor designed for surface-mount applications in demanding electrical environments. It operates across a wide temperature range and is suited to circuits requiring controlled low-side switching and power management within Compact SOT-323 packages. The device offers practical gate-charge characteristics and modest power handling for small-signal and automotive-related circuitry.
Features and Benefits:
• 550mΩ Rds(on) reduces on-state conduction losses
• 80nC gate charge enables predictable switching performance
• 1V forward voltage minimises voltage drop in diode conduction
• 81W power dissipation supports transient thermal loading
• ±20V gate-source tolerance allows flexible drive arrangements
• 80nC gate charge enables predictable switching performance
• 1V forward voltage minimises voltage drop in diode conduction
• 81W power dissipation supports transient thermal loading
• ±20V gate-source tolerance allows flexible drive arrangements
Applications
• Suitable for automotive control Interface circuits
• Ideal for Compact power-rail reverse-polarity protection
• Used with battery-management sensing and switching
• Can be used for portable device power sequencing
• Useful in surface-mount signal-level power switching
• Ideal for Compact power-rail reverse-polarity protection
• Used with battery-management sensing and switching
• Can be used for portable device power sequencing
• Useful in surface-mount signal-level power switching
What operating temperatures can it withstand?
It functions from -55°C up to +150°C.
How many pins and what mounting style does it use?
It is a 3-pin device designed for surface mounting in SOT-323 packages.
What certifications or approvals are present for industry use?
It is RoHS-compliant and meets AEC-Q101 automotive standard requirements.
What is the maximum permitted drain-source voltage and gate limit?
The drain-source rating is -20V and the maximum gate-source voltage is ±20V.
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