DiodesZetex DMP2900 Type P-Channel MOSFET, 600 mA, 20 V Enhancement, 3-Pin SOT-323 DMP2900UW-7
- RS Stock No.:
- 206-0113
- Mfr. Part No.:
- DMP2900UW-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
SGD213.00
(exc. GST)
SGD231.00
(inc. GST)
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Temporarily out of stock
- 3,000 unit(s) shipping from 20 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | SGD0.071 | SGD213.00 |
| 9000 - 42000 | SGD0.07 | SGD210.00 |
| 45000 - 87000 | SGD0.068 | SGD204.00 |
| 90000 - 177000 | SGD0.064 | SGD192.00 |
| 180000 + | SGD0.057 | SGD171.00 |
*price indicative
- RS Stock No.:
- 206-0113
- Mfr. Part No.:
- DMP2900UW-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMP2900 | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.3W | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Standards/Approvals | No | |
| Width | 1.8 mm | |
| Height | 0.9mm | |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMP2900 | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.3W | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Standards/Approvals No | ||
Width 1.8 mm | ||
Height 0.9mm | ||
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 20V P- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 6V with 0.3 W thermal power dissipation.
Low on-resistance
Low input capacitance
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