onsemi NTA7002N Type N-Channel MOSFET, 150 mA, 30 V Enhancement, 3-Pin SC-75 NTA7002NT1G
- RS Stock No.:
- 780-0501
- Mfr. Part No.:
- NTA7002NT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
SGD5.15
(exc. GST)
SGD5.60
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 63,350 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | SGD0.103 | SGD5.15 |
| 100 - 200 | SGD0.101 | SGD5.05 |
| 250 - 450 | SGD0.098 | SGD4.90 |
| 500 - 950 | SGD0.095 | SGD4.75 |
| 1000 + | SGD0.092 | SGD4.60 |
*price indicative
- RS Stock No.:
- 780-0501
- Mfr. Part No.:
- NTA7002NT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NTA7002N | |
| Package Type | SC-75 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 300mW | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.65mm | |
| Height | 0.8mm | |
| Width | 0.9 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NTA7002N | ||
Package Type SC-75 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 300mW | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 1.65mm | ||
Height 0.8mm | ||
Width 0.9 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET with Schottky Diode, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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