N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB30N60E-GE3

RS Stock No.:: 768-9310
Mfr. Part No.:: SIHB30N60E-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB30N60E-GE3

This image is representative of the product range

Bulk discount available

Price Each

SGD8.24

(exc. GST)

SGD8.98

(inc. GST)

58 In stock for delivery within 5 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit
1 - 9	SGD8.24
10 - 49	SGD7.83
50 - 99	SGD6.66
100 - 249	SGD6.50
250 +	SGD6.35

RS Stock No.:: 768-9310
Mfr. Part No.:: SIHB30N60E-GE3
Manufacturer:: Vishay

SiHB30N60E, E Series Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	29 A
Maximum Drain Source Voltage	600 V
Series	E Series
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	125 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	10.67mm
Typical Gate Charge @ Vgs	85 nC @ 10 V
Width	9.65mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	4.83mm

N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB30N60E-GE3

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

Features

Related links