Vishay E Type N-Channel MOSFET, 21 A, 800 V Enhancement, 3-Pin TO-263 SIHB24N80AE-GE3
- RS Stock No.:
- 228-2847
- Mfr. Part No.:
- SIHB24N80AE-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD8.74
(exc. GST)
SGD9.52
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 944 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD4.37 | SGD8.74 |
| 10 - 18 | SGD3.945 | SGD7.89 |
| 20 - 24 | SGD3.86 | SGD7.72 |
| 26 - 98 | SGD3.70 | SGD7.40 |
| 100 + | SGD3.235 | SGD6.47 |
*price indicative
- RS Stock No.:
- 228-2847
- Mfr. Part No.:
- SIHB24N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 184mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Power Dissipation Pd | 208W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 184mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Power Dissipation Pd 208W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Related links
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
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- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-GE3