Vishay E Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-263

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Subtotal (1 tube of 50 units)*

SGD121.05

(exc. GST)

SGD131.95

(inc. GST)

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Units
Per unit
Per Tube*
50 - 50SGD2.421SGD121.05
100 - 150SGD2.34SGD117.00
200 +SGD2.184SGD109.20

*price indicative

RS Stock No.:
210-4969
Mfr. Part No.:
SIHB15N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

304mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

158W

Typical Gate Charge Qg @ Vgs

35nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

4.06mm

Length

14.61mm

Automotive Standard

No

The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with 13 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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