MPN

Vishay E Type N-Channel MOSFET, 25 A, 650 V Enhancement, 3-Pin TO-263

RS Stock No.:: 228-2843
Mfr. Part No.:: SIHB120N60E-T5-GE3
Manufacturer:: Vishay

Vishay E Type N-Channel MOSFET, 25 A, 650 V Enhancement, 3-Pin TO-263

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RS Stock No.:: 228-2843
Mfr. Part No.:: SIHB120N60E-T5-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	E
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	120mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	30nC
	Maximum Power Dissipation Pd	179W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series E
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 120mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 30nC
	Maximum Power Dissipation Pd 179W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - SIHB120N60E-T5-GE3

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Vishay E Type N-Channel MOSFET, 25 A, 650 V Enhancement, 3-Pin TO-263

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