Vishay E Type N-Channel MOSFET, 25 A, 600 V Enhancement, 4-Pin PowerPAK SIHH26N60E-T1-GE3
- RS Stock No.:
- 124-2251
- Mfr. Part No.:
- SIHH26N60E-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
SGD7.81
(exc. GST)
SGD8.51
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 18 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 99 | SGD7.81 |
| 100 - 499 | SGD7.64 |
| 500 - 999 | SGD7.32 |
| 1000 - 2999 | SGD7.17 |
| 3000 + | SGD7.02 |
*price indicative
- RS Stock No.:
- 124-2251
- Mfr. Part No.:
- SIHH26N60E-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 135mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 202W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 77nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Height | 1mm | |
| Width | 8.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 135mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 202W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 77nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Height 1mm | ||
Width 8.1 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
Features
Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK 8 x 8
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH240N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK SIHR120N60E-T1-GE3
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK SIHR100N60E-T1-GE3