MPN

Vishay E N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-263 SIHB30N60E-GE3

RS Stock No.:: 145-1820
Mfr. Part No.:: SIHB30N60E-GE3
Manufacturer:: Vishay

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Subtotal (1 tube of 50 units)*

SGD263.70

(exc. GST)

SGD287.45

(inc. GST)

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Last RS stock

Final 550 unit(s), ready to ship from another location

Units	Per unit	Per Tube*	Saving
50 - 100	SGD5.274	SGD263.70	-
150 - 200	SGD5.076	SGD253.80	SGD29.70
250 +	SGD4.759	SGD237.95	SGD128.75

*price indicative

RS Stock No.:: 145-1820
Mfr. Part No.:: SIHB30N60E-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	E
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	85nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	250W
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Length	10.67mm
	Height	4.83mm
	Width	9.65mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series E
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 85nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 250W
	Maximum Gate Source Voltage Vgs -20V, +20V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Length 10.67mm
	Height 4.83mm
	Width 9.65mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: CN

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features

Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor

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