N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB30N60E-GE3

RS Stock No.:: 145-1820
Mfr. Part No.:: SIHB30N60E-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB30N60E-GE3

This image is representative of the product range

Bulk discount available

Price Each (In a Tube of 50)**

SGD5.079

(exc. GST)

SGD5.536

(inc. GST)

289 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Tube**
50 - 100	SGD5.079	SGD253.95
150 - 200	SGD4.888	SGD244.40
250 +	SGD4.583	SGD229.15

**price indicative

RS Stock No.:: 145-1820
Mfr. Part No.:: SIHB30N60E-GE3
Manufacturer:: Vishay

SiHB30N60E, E Series Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	29 A
Maximum Drain Source Voltage	600 V
Package Type	D2PAK (TO-263)
Series	E Series
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	125 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	9.65mm
Transistor Material	Si
Length	10.67mm
Typical Gate Charge @ Vgs	85 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	4.83mm

N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB30N60E-GE3

FREE delivery for orders over SGD250.00 (ex GST)

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

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