N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB30N60E-GE3

RS Stock No.:: 145-1820
Mfr. Part No.:: SIHB30N60E-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB30N60E-GE3

This image is representative of the product range

Bulk discount available

Price Each (In a Tube of 50)

SGD6.479

(exc. GST)

SGD7.062

(inc. GST)

539 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tube**
50 - 100	SGD6.479	SGD323.95
150 - 200	SGD6.236	SGD311.80
250 +	SGD5.846	SGD292.30

**price indicative

RS Stock No.:: 145-1820
Mfr. Part No.:: SIHB30N60E-GE3
Manufacturer:: Vishay

SiHB30N60E, E Series Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	29 A
Maximum Drain Source Voltage	600 V
Package Type	D2PAK (TO-263)
Series	E Series
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	125 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.67mm
Width	9.65mm
Typical Gate Charge @ Vgs	85 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	4.83mm

N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB30N60E-GE3

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

Features

Related links