Infineon HEXFET N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-247 IRFP4227PBF
- RS Stock No.:
- 650-4772
- Mfr. Part No.:
- IRFP4227PBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
SGD6.22
(exc. GST)
SGD6.78
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
Last RS stock
- Plus 2 unit(s) shipping from 05 October 2026
- Final 11 unit(s) shipping from 12 October 2026
Units | Per unit |
|---|---|
| 1 - 9 | SGD6.22 |
| 10 - 49 | SGD6.07 |
| 50 - 99 | SGD5.87 |
| 100 - 249 | SGD5.69 |
| 250 + | SGD5.52 |
*price indicative
- RS Stock No.:
- 650-4772
- Mfr. Part No.:
- IRFP4227PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 330W | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Width | 5.3mm | |
| Height | 20.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 330W | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Width 5.3mm | ||
Height 20.3mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 65A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRFP4227PBF
This MOSFET functions as a vital component in contemporary electronic applications, offering dependable control and switching for high-power systems. It delivers robust performance and efficiency, making it suitable for a variety of industrial tasks, particularly in settings where high thermal resistance and low conduction losses are essential. The enhancement mode design facilitates optimal operation under diverse conditions, thereby making it ideal for automation, electrical systems, and mechanical applications.
Features & Benefits
• Provides 65A continuous drain current for intensive applications
• Operates efficiently at a maximum drain-source voltage of 200V
• Low RDS(on) contributes to energy efficiency during use
• Rated for high temperature tolerance up to 175°C
• Optimised for fast switching with minimal fall and rise times
• Offers excellent repetitive avalanche capability for enhanced system reliability
Applications
• Utilised in energy recovery systems to enhance efficiency
• Compatible with PDP sustain for effective performance
• Suitable for high-power motor drive circuits requiring accurate control
• Employed in switching power supplies within automation processes
• Used in professional audio amplifiers for effective output handling
What is the maximum current that can be handled at elevated temperatures?
It can manage a continuous drain current of 46A at 100°C, ensuring functionality in tough environments.
How does this component perform under pulsed conditions?
The pulsed drain current can reach up to 130A, making it appropriate for transient applications.
What are the cooling requirements when using this device?
It has a thermal resistance of 0.45°C/W from junction to case, requiring effective heat dissipation mechanisms for optimal operation.
What type of mounting is required for installation?
Installation necessitates through-hole mounting, suitable for robust applications needing solid connections.
How does the gate charge impact switching speed?
It features a typical total gate charge of 70nC, enabling quick and efficient switching, which is crucial in high-speed applications.
Related links
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRFB4227PBF
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247