Infineon HEXFET N-Channel MOSFET, 50 A, 200 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 919-5019
- Mfr. Part No.:
- IRFP260NPBF
- Manufacturer:
- Infineon
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SGD78.45
(exc. GST)
SGD85.50
(inc. GST)
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In Stock
- Plus 575 unit(s) shipping from 14 September 2026
- Plus 400 unit(s) shipping from 22 October 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | SGD3.138 | SGD78.45 |
| 50 - 100 | SGD3.103 | SGD77.58 |
| 125 - 225 | SGD3.019 | SGD75.48 |
| 250 - 475 | SGD2.856 | SGD71.40 |
| 500 + | SGD2.547 | SGD63.68 |
*price indicative
- RS Stock No.:
- 919-5019
- Mfr. Part No.:
- IRFP260NPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 234nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.3mm | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Height | 20.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 234nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Operating Temperature 175°C | ||
Width 5.3mm | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Height 20.3mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 50A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFP260NPBF
This MOSFET is intended for high-power applications, delivering efficiency and reliability across various electronic systems. With its enhancement mode design and robust current handling capabilities, it plays a crucial role in optimising circuit performance while effectively managing thermal dissipation.
Features & Benefits
• Supports continuous drain currents up to 50A for strong performance
• Operates efficiently with a maximum drain-source voltage of 200V
• Enhancement mode design offers improved control and versatility
• Low Rds(on) of 40mΩ reduces energy losses
• Designed for through-hole mounting, facilitating easy installation
Applications
• Utilised in power supply circuits for managing high currents
• Suitable for automotive requiring durable electronic components
• Applied in industrial equipment for effective power control
• Commonly found in renewable energy systems to enhance efficiency
What is the maximum power dissipation for this component?
The power dissipation can reach up to 300W, ensuring efficient performance in high-load conditions.
How does the low Rds(on) benefit circuit efficiency?
The low Rds(on) of 40mΩ significantly reduces conduction losses, enhancing overall efficiency and minimising heat generation during operation.
What are the advantages of using this MOSFET in power applications?
This MOSFET provides high continuous drain current and operates effectively across a wide temperature range, making it suitable for power applications.
Is it easy to install with other components in a circuit?
The through-hole mounting type simplifies integration into various circuit designs, allowing for straightforward assembly with existing components.
How does the enhance mode design affect performance?
The enhancement mode design ensures that the device conducts only when sufficient gate voltage is applied, improving switching efficiency and reducing unwanted current flow during inactive periods.
Related links
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247 IRFP260NPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247 IRFP260MPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247