Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

SGD112.75

(exc. GST)

SGD122.90

(inc. GST)

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Temporarily out of stock
  • 950 unit(s) shipping from 15 January 2026
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Units
Per unit
Per Tube*
50 - 50SGD2.255SGD112.75
100 - 200SGD2.231SGD111.55
250 - 450SGD2.17SGD108.50
500 - 950SGD2.053SGD102.65
1000 +SGD1.831SGD91.55

*price indicative

RS Stock No.:
913-3932
Mfr. Part No.:
IRFB4227PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

330W

Typical Gate Charge Qg @ Vgs

70nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.66mm

Height

9.02mm

Width

4.82 mm

Automotive Standard

No

COO (Country of Origin):
CN

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