Infineon HEXFET Type P-Channel MOSFET, 40 A, 100 V Enhancement, 3-Pin TO-220 IRF5210PBF
- RS Stock No.:
- 541-1720
- Distrelec Article No.:
- 303-41-280
- Mfr. Part No.:
- IRF5210PBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
SGD3.89
(exc. GST)
SGD4.24
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 35 unit(s) shipping from 14 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 24 | SGD3.89 |
| 25 - 99 | SGD3.81 |
| 100 - 249 | SGD3.69 |
| 250 - 499 | SGD3.59 |
| 500 + | SGD3.49 |
*price indicative
- RS Stock No.:
- 541-1720
- Distrelec Article No.:
- 303-41-280
- Mfr. Part No.:
- IRF5210PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 200W | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.69mm | |
| Length | 10.54mm | |
| Standards/Approvals | No | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 200W | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 4.69mm | ||
Length 10.54mm | ||
Standards/Approvals No | ||
Height 8.77mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 40A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF5210PBF
This MOSFET is designed for various electrical and electronic applications. It is optimised for high efficiency, supporting automation and control systems where effective power management is crucial. Its robust specifications enable precise circuit control, ensuring reliability and efficiency in challenging environments.
Features & Benefits
• 40A continuous drain current accommodates high-power applications
• 100V maximum drain-source voltage provides operational versatility
• P-channel design simplifies circuit configuration
• Enhancement mode functionality facilitates efficient power management
• High maximum power dissipation capability enhances thermal performance
Applications
• Power switching in industrial automation
• DC-DC converters for efficient power supply
• Motor control circuits for precision
• Peak power handling scenarios in electronics
What is the maximum operating temperature for this component?
The component can operate at a maximum temperature of +175°C, making it suitable for high-temperature applications.
How does the low on-resistance benefit circuit performance?
The low on-resistance results in reduced power losses, leading to enhanced energy efficiency and improved thermal management.
Is this suitable for applications in automotive systems?
Yes, its robust specifications and thermal characteristics make it suitable for automotive applications where reliability is essential.
What kind of circuit configurations can it be integrated into?
This component integrates seamlessly into various configurations, including single and parallel arrangements, allowing for design flexibility.
How should it be installed to ensure optimal performance?
Ensure proper thermal contact with a heatsink, and adhere to recommended PCB layout guidelines to enhance performance and reliability.
Related links
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF9540NPBF
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF9530NPBF
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin I2PAK
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-247