P-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB Infineon IRF9530NPBF

RS Stock No.:: 919-4860
Mfr. Part No.:: IRF9530NPBF
Manufacturer:: Infineon

P-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB Infineon IRF9530NPBF

Bulk discount available

Subtotal (1 tube of 50 units)**

SGD42.95

(exc. GST)

SGD46.80

(inc. GST)

550 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Tube**
50 - 50	SGD0.859	SGD42.95
100 - 200	SGD0.85	SGD42.50
250 - 450	SGD0.827	SGD41.35
500 - 950	SGD0.782	SGD39.10
1000 +	SGD0.698	SGD34.90

**price indicative

RS Stock No.:: 919-4860
Mfr. Part No.:: IRF9530NPBF
Manufacturer:: Infineon

P-Channel Power MOSFET 100V to 150V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 14A Maximum Continuous Drain Current, 79W Maximum Power Dissipation - IRF9530NPBF

This MOSFET is designed for high-efficiency applications in the automation, electronics, and electrical sectors. Its P-channel configuration enhances switching performance, making it vital for power management systems. The device operates effectively in various environments, delivering consistent performance under challenging conditions, making it an important component for engineers and designers seeking durability and efficiency.

Features & Benefits

• Maximum continuous drain current of 14A for robust performance
• Compatible with drain-source voltages of up to 100V for versatility
• Low on-resistance of 200mΩ enhances power efficiency
• TO-220AB package design facilitates easy mounting and heat dissipation
• Enhancement mode operation ensures dependable switching performance
• High gate threshold voltage of 4V allows for effective control

Applications

• Suitable for integration into power supply circuits
• Utilised in motor control systems for improved efficiency
• Applicable in power converters for enhanced energy management
• Ideal for power switching in electronic devices
• Employed in high current driver circuits for dependability

How can the operating temperature range affect usage?

The device operates effectively between -55°C and +175°C, enabling functionality in extreme conditions without compromising performance.

What are the implications of the maximum power dissipation specification?

With a maximum power dissipation of 79W, the component can manage substantial load demands, ensuring stable operation and longevity in high-performance settings.

Can it be used in parallel configurations for increased current capacity?

Yes, it can be arranged in parallel to distribute current loads effectively, provided that thermal management is suitably addressed.

What precautions should be taken during installation?

Proper heat sinking is essential to prevent overheating

it is important to ensure that thermal resistance aligns with the system's specifications for long-term reliability.

How does device selection impact overall circuit performance?

Choosing the appropriate specifications improves circuit efficiency, reducing power losses and enhancing overall system performance, especially in high-demand applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	14 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	200 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	79 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Typical Gate Charge @ Vgs	58 nC @ 10 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Height	8.77mm
Minimum Operating Temperature	-55 °C