Infineon HEXFET P-Channel MOSFET, 6.6 A, 100 V, 3-Pin DPAK IRFR9120NTRPBF

RS Stock No.:: 913-4795
Mfr. Part No.:: IRFR9120NTRPBF
Manufacturer:: Infineon

Infineon HEXFET P-Channel MOSFET, 6.6 A, 100 V, 3-Pin DPAK IRFR9120NTRPBF

Bulk discount available

Subtotal (1 reel of 2000 units)**

SGD1,118.00

(exc. GST)

SGD1,218.00

(inc. GST)

Temporarily out of stock - back order for despatch 05/07/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD150.00 (ex GST)

Units	Per unit	Per Reel**
2000 - 2000	SGD0.559	SGD1,118.00
4000 - 6000	SGD0.548	SGD1,096.00
8000 - 18000	SGD0.537	SGD1,074.00
20000 - 38000	SGD0.526	SGD1,052.00
40000 +	SGD0.516	SGD1,032.00

**price indicative

RS Stock No.:: 913-4795
Mfr. Part No.:: IRFR9120NTRPBF
Manufacturer:: Infineon

P-Channel Power MOSFET 100V to 150V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 6.6A Maximum Continuous Drain Current, 40W Maximum Power Dissipation - IRFR9120NTRPBF

This MOSFET plays a vital role in contemporary electronic circuits, especially in applications that require efficient current management. It is characterised by its ability to deliver high performance and low on-resistance, making it suitable for a wide range of electrical and electronic systems. This device is tailored to meet the requirements of sectors such as automation, electrical engineering, and other areas dependent on power management solutions.

Features & Benefits

• High continuous drain current rating of 6.6A supports effective operation
• Capable of managing voltages up to 100V for demanding applications
• Designed in DPAK TO-252 package for precise surface mounting
• Low maximum drain-source resistance of 480mΩ improves power efficiency
• Provides a gate threshold voltage range of 2V to 4V for dependable control
• Supports enhancement mode operation to enhance switching performance

Applications

• Utilised for power management in automation systems
• Employed in DC-DC converter designs
• Suitable for high current switching in industrial equipment
• Integrated into power supply circuits for efficient performance
• Applicable in inverter circuits and motor control

What is the optimal operating temperature for this product?

The optimal operating temperature ranges from -55°C to +150°C, allowing efficient performance in various environments.

How can the gate threshold voltage influence performance?

The maximum gate threshold voltage impacts switching behaviour

the defined range of 2V to 4V ensures reliable on/off conditions.

Is there a specific method for mounting this device?

It is designed for surface mount applications, particularly within the DPAK TO-252 footprint, facilitating integration into PCB layouts.

What does the low RDS(on) mean for my circuit?

A low RDS(on) helps minimise power loss during operation, enhancing overall system efficiency and reducing heat generation.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	6.6 A
Maximum Drain Source Voltage	100 V
Package Type	DPAK (TO-252)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	480 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	40 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	27 nC @ 10 V
Length	6.73mm
Number of Elements per Chip	1
Width	6.22mm
Height	2.39mm
Minimum Operating Temperature	-55 °C