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    N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG30PBF

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    Subtotal (1 unit)**

    SGD3.17

    (exc. GST)

    SGD3.46

    (inc. GST)

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    1 - 9SGD3.17
    10 - 24SGD3.09
    25 - 49SGD3.02
    50 - 99SGD2.95
    100 +SGD2.88

    **price indicative

    Packaging Options:
    RS Stock No.:
    541-1146
    Distrelec Article No.:
    171-15-229
    Mfr. Part No.:
    IRFBG30PBF
    Manufacturer:
    Vishay
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    Manufacturer

    Vishay

    Channel Type

    N

    Maximum Continuous Drain Current

    3.1 A

    Maximum Drain Source Voltage

    1000 V

    Package Type

    TO-220AB

    Mounting Type

    Through Hole

    Pin Count

    3

    Maximum Drain Source Resistance

    5 Ω

    Channel Mode

    Enhancement

    Minimum Gate Threshold Voltage

    2V

    Maximum Power Dissipation

    125 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -20 V, +20 V

    Number of Elements per Chip

    1

    Typical Gate Charge @ Vgs

    80 nC @ 10 V

    Transistor Material

    Si

    Maximum Operating Temperature

    +150 °C

    Length

    10.41mm

    Width

    4.7mm

    Minimum Operating Temperature

    -55 °C

    Height

    9.01mm

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