N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-268 IXYS IXFT18N100Q3

RS Stock No.:: 168-4712
Mfr. Part No.:: IXFT18N100Q3
Manufacturer:: IXYS

N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-268 IXYS IXFT18N100Q3

This image is representative of the product range

Price Each (In a Tube of 30)

SGD30.067

(exc. GST)

SGD32.773

(inc. GST)

Available for back order.*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tube**
30 +	SGD30.067	SGD902.01

**price indicative

RS Stock No.:: 168-4712
Mfr. Part No.:: IXFT18N100Q3
Manufacturer:: IXYS

IXFT18N100Q3, IXFH18N100Q3, HiperFET Power MOSFET Q3-Class, N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	1000 V
Package Type	TO-268
Series	HiperFET, Q3-Class
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	660 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	830 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	16.05mm
Width	14mm
Typical Gate Charge @ Vgs	90 nC @ 10 V
Number of Elements per Chip	1
Height	5.1mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-268 IXYS IXFT18N100Q3

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

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