N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXYS IXFH18N100Q3

RS Stock No.:: 801-1382
Mfr. Part No.:: IXFH18N100Q3
Manufacturer:: IXYS

N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXYS IXFH18N100Q3

This image is representative of the product range

Bulk discount available

Price Each

SGD28.90

(exc. GST)

SGD31.50

(inc. GST)

Temporarily out of stock - back order for despatch 23/05/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit
1 - 9	SGD28.90
10 - 49	SGD27.52
50 - 99	SGD25.32
100 - 249	SGD25.29
250 +	SGD25.28

RS Stock No.:: 801-1382
Mfr. Part No.:: IXFH18N100Q3
Manufacturer:: IXYS

IXFT18N100Q3, IXFH18N100Q3, HiperFET Power MOSFET Q3-Class, N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	1000 V
Package Type	TO-247
Series	HiperFET, Q3-Class
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	660 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	830 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Width	5.3mm
Typical Gate Charge @ Vgs	90 nC @ 10 V
Length	16.26mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Height	16.26mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 18 A, 1000 V, 3-Pin TO-247 IXYS IXFH18N100Q3

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

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