Vishay IRFR320 Type N-Channel Power MOSFET, 3.1 A, 400 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 177-7558
- Mfr. Part No.:
- IRFR320TRPBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2000 units)*
SGD1,892.00
(exc. GST)
SGD2,062.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 09 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 4000 | SGD0.946 | SGD1,892.00 |
| 6000 - 8000 | SGD0.91 | SGD1,820.00 |
| 10000 + | SGD0.853 | SGD1,706.00 |
*price indicative
- RS Stock No.:
- 177-7558
- Mfr. Part No.:
- IRFR320TRPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-252 | |
| Series | IRFR320 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 42W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 2.38mm | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-252 | ||
Series IRFR320 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 42W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 2.38mm | ||
Length 6.73mm | ||
Width 6.22mm | ||
Automotive Standard No | ||
Vishay IRFR320 Series Power MOSFET, 400V Drain-Source Voltage, 3.1A Continuous Drain Current - IRFR320TRPBF
This power MOSFET is a high-voltage N-channel device designed for switching and amplification tasks in industrial electronics. It operates as an enhancement-mode transistor suited to surface-mount assemblies and supports demanding electrical environments where controlled high-voltage switching is required.
Features and Benefits:
• 400V drain rating enables high-voltage switching applications • 3.1A continuous drain capacity supports moderate current loads • 1.8Ω low Rds(on) minimises conduction losses at rated conditions • 20nC typical gate charge allows predictable switching dynamics • 42W maximum power dissipation permits significant thermal loading • -55°C to 150°C operating range ensures wide temperature resilience
Applications
• Suitable for flyback and forward converters in power supplies • Ideal for industrial motor control stages with high-voltage rails • Used for high-voltage lighting and ballast switching circuits • Can be used for protection circuits requiring robust blocking voltage
What package type should I expect for surface mounting?
The device is supplied in a TO-252 package configured for solder-down mounting to a PCB and thermal plane.
What gate voltage limits must I observe during design?
Gate excursions must remain within ±20V relative to the source to avoid exceeding the gate-source rating.
How should thermal management be approached on a board?
Use adequate copper area and thermal vias under the TO-252 land to dissipate up to the stated 42W power, considering derating for ambient temperature and airflow.
What atmosphere and approval considerations apply for procurement?
The component conforms to RoHS material restrictions for lead‑free system integration.
Related links
- Vishay IRFR320 Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-252
- Vishay IRFR320 Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-252 IRFR320TRPBF
- Vishay IRFR Type N-Channel Power MOSFET 200 V Enhancement, 3-Pin TO-252
- Vishay IRFR420 Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-252
- Vishay D Series Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-252 SIHD3N50D-GE3
- Vishay IRFR Type N-Channel Power MOSFET 200 V Enhancement, 3-Pin TO-252 IRFR210TRPBF
- Vishay IRFR420 Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-252 IRFR420TRPBF
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin TO-252 SQD25N06-22L_GE3