Vishay IRFR320 Type N-Channel Power MOSFET, 3.1 A, 400 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 177-7558
- Mfr. Part No.:
- IRFR320TRPBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2000 units)*
SGD1,892.00
(exc. GST)
SGD2,062.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 20 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 4000 | SGD0.946 | SGD1,892.00 |
| 6000 - 8000 | SGD0.91 | SGD1,820.00 |
| 10000 + | SGD0.853 | SGD1,706.00 |
*price indicative
- RS Stock No.:
- 177-7558
- Mfr. Part No.:
- IRFR320TRPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-252 | |
| Series | IRFR320 | |
| Mount Type | Through Hole, Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 42W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-252 | ||
Series IRFR320 | ||
Mount Type Through Hole, Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 42W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 6.73mm | ||
Height 2.38mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 300V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay IRFR320 Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-252
- Vishay IRFR320 Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-252 IRFR320TRPBF
- Vishay IRFR420 Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-252
- Vishay IRFR Type N-Channel Power MOSFET 200 V Enhancement, 3-Pin TO-252
- Vishay Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-252 SIHD3N50D-GE3
- Vishay IRFR420 Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-252 IRFR420TRPBF
- Vishay IRFR Type N-Channel Power MOSFET 200 V Enhancement, 3-Pin TO-252 IRFR210TRPBF
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin TO-252 SQD25N06-22L_GE3