N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-247AC Infineon IRFP064NPBF

RS Stock No.:: 541-0008
Distrelec Article No.:: 303-41-342
Mfr. Part No.:: IRFP064NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-247AC Infineon IRFP064NPBF

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RS Stock No.:: 541-0008
Distrelec Article No.:: 303-41-342
Mfr. Part No.:: IRFP064NPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 110A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRFP064NPBF

This MOSFET represents a high-performance electronic component designed for efficient power management. It can handle a continuous drain current of 110A and a maximum drain-source voltage of 55V, making it suitable for use in automation, electronics, and electrical industries. The enhancement mode design ensures optimal performance under various conditions, highlighting its role in contemporary electronic systems.

Features & Benefits

• Low on-resistance of 8mΩ enhances efficiency
• Maximum power dissipation of 200W ensures robust operation
• Capable of withstanding operating temperatures up to +175°C
• Versatile, compatible with both negative and positive gate-source voltages
• Single transistor configuration supports a variety of applications

Applications

• Used in power supply circuits that require high efficiency
• Common in motor control systems for automation
• Appropriate for telecommunications equipment
• Effective in power conversion systems in industrial environments

What is the maximum power dissipation for this component?

The maximum power dissipation is 200W, which supports robust performance across diverse applications.

Can it operate in high-temperature environments?

Yes, it is capable of functioning effectively at temperatures up to +175°C, making it suitable for challenging conditions.

What type of gate voltage is required for operation?

This device operates with a maximum gate-source voltage range of -20V to +20V, allowing for flexible control options.

How does the channel type influence its performance?

The N-channel type is beneficial for applications needing efficient switching and high current handling.

Is it suitable for through-hole design integrations?

Yes, it has a TO-247AC package with a through-hole mounting type, making installation straightforward in various setups.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	110 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	TO-247AC
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	200 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	170 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Length	15.9mm
Width	5.3mm
Maximum Operating Temperature	+175 °C
Forward Diode Voltage	1.3V
Height	20.7mm
Minimum Operating Temperature	-55 °C