Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-263 IRF3205ZSTRLPBF

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Subtotal (1 pack of 10 units)*

SGD19.89

(exc. GST)

SGD21.68

(inc. GST)

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Per unit
Per Pack*
10 - 10SGD1.989SGD19.89
20 - 90SGD1.825SGD18.25
100 - 240SGD1.683SGD16.83
250 - 490SGD1.566SGD15.66
500 +SGD1.519SGD15.19

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Packaging Options:
RS Stock No.:
222-4735
Mfr. Part No.:
IRF3205ZSTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

76nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

170W

Standards/Approvals

No

Length

10.67mm

Width

9.65 mm

Height

4.83mm

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Advanced process technology

Ultra-low on-resistance Fast switching

Lead-Free, RoHS Compliant

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