Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 222-4734
- Mfr. Part No.:
- IRF3205ZSTRLPBF
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 reel of 800 units)*
SGD790.40
(exc. GST)
SGD861.60
(inc. GST)
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In Stock
- 800 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | SGD0.988 | SGD790.40 |
| 1600 - 1600 | SGD0.971 | SGD776.80 |
| 2400 - 4000 | SGD0.945 | SGD756.00 |
| 4800 - 8800 | SGD0.896 | SGD716.80 |
| 9600 + | SGD0.803 | SGD642.40 |
*price indicative
- RS Stock No.:
- 222-4734
- Mfr. Part No.:
- IRF3205ZSTRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 170W | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 170W | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant
Related links
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