Infineon HEXFET Type N-Channel MOSFET, 160 A, 55 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 907-4996
- Mfr. Part No.:
- IRFP1405PBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD21.85
(exc. GST)
SGD23.80
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 20 unit(s) ready to ship from another location
- Plus 180 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD4.37 | SGD21.85 |
| 25 - 120 | SGD4.242 | SGD21.21 |
| 125 - 245 | SGD4.074 | SGD20.37 |
| 250 - 620 | SGD3.87 | SGD19.35 |
| 625 + | SGD3.636 | SGD18.18 |
*price indicative
- RS Stock No.:
- 907-4996
- Mfr. Part No.:
- IRFP1405PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 160A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 310W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.29mm | |
| Standards/Approvals | No | |
| Width | 19.71 mm | |
| Height | 5.31mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-44-460 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 160A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 310W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Maximum Operating Temperature 175°C | ||
Length 15.29mm | ||
Standards/Approvals No | ||
Width 19.71 mm | ||
Height 5.31mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-44-460 | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-247 IRFP1405PBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247 IRFP3306PBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-247 IRFP054NPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-247 IRFP064NPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220