Infineon HEXFET Type N-Channel MOSFET, 24 A, 200 V TO-263 IRFS4620TRLPBF

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Subtotal (1 pack of 5 units)*

SGD13.59

(exc. GST)

SGD14.815

(inc. GST)

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Units
Per unit
Per Pack*
5 - 20SGD2.718SGD13.59
25 - 45SGD2.434SGD12.17
50 - 95SGD2.384SGD11.92
100 - 245SGD1.958SGD9.79
250 +SGD1.918SGD9.59

*price indicative

Packaging Options:
RS Stock No.:
257-9436
Mfr. Part No.:
IRFS4620TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-263

Maximum Drain Source Resistance Rds

77.5mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

144W

Typical Gate Charge Qg @ Vgs

25nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFS series is the 200V single n channel HEXFET Power mosfet in a D2 Pak package.

Improved gate, avalanche and dynamic dV/dt ruggedness

Fully characterized capacitance and avalanche SOA

Enhanced body diode dV/dt and dI/dt capability lead free

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