Infineon HEXFET Type N-Channel MOSFET, 24 A, 100 V Enhancement, 3-Pin TO-220 IRFI1310NPBF
- RS Stock No.:
- 262-6752
- Mfr. Part No.:
- IRFI1310NPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD14.11
(exc. GST)
SGD15.38
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 3,800 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD2.822 | SGD14.11 |
| 50 - 95 | SGD2.194 | SGD10.97 |
| 100 - 245 | SGD1.976 | SGD9.88 |
| 250 - 995 | SGD1.936 | SGD9.68 |
| 1000 + | SGD1.796 | SGD8.98 |
*price indicative
- RS Stock No.:
- 262-6752
- Mfr. Part No.:
- IRFI1310NPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.036Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-34-458 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.036Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 304-34-458 | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has 4.8mm sink to lead creep age distance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Fully avalanche rated
High voltage isolation 2.5KVRMS
Related links
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