Infineon HEXFET N-Channel MOSFET, 76 A, 200 V Enhancement TO-220 IRFB4127PBF
- RS Stock No.:
- 257-5807
- Mfr. Part No.:
- IRFB4127PBF
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (2 units, in packs of 2)*
SGD13.58
(exc. GST)
SGD14.80
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- 790 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD6.79 | SGD13.58 |
| 10 - 18 | SGD6.095 | SGD12.19 |
| 20 - 48 | SGD5.97 | SGD11.94 |
| 50 - 98 | SGD5.86 | SGD11.72 |
| 100 + | SGD5.02 | SGD10.04 |
*price indicative
- RS Stock No.:
- 257-5807
- Mfr. Part No.:
- IRFB4127PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | PCB | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type PCB | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Industry standard through-hole power package
High-current rating
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available
Related links
- Infineon HEXFET N-Channel MOSFET 200 V TO-220
- Infineon HEXFET N-Channel MOSFET 200 V TO-220
- Infineon HEXFET N-Channel MOSFET 200 V TO-220
- Infineon HEXFET N-Channel MOSFET 200 V TO-220 IRF200B211
- Infineon HEXFET N-Channel MOSFET 200 V TO-220 IRFB4620PBF
- Infineon HEXFET N-Channel MOSFET 200 V TO-252
- Infineon HEXFET N-Channel MOSFET 200 V TO-247
- Infineon HEXFET N-Channel MOSFET 200 V TO-262