Infineon HEXFET Type N-Channel MOSFET, 46 A, 250 V TO-220

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Subtotal (1 tube of 50 units)*

SGD117.60

(exc. GST)

SGD128.20

(inc. GST)

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In Stock
  • Plus 450 unit(s) shipping from 29 December 2025
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Units
Per unit
Per Tube*
50 - 50SGD2.352SGD117.60
100 - 450SGD2.281SGD114.05
500 - 950SGD2.19SGD109.50
1000 - 1950SGD2.081SGD104.05
2000 +SGD1.956SGD97.80

*price indicative

RS Stock No.:
257-9346
Mfr. Part No.:
IRFB4229PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

46A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

15mΩ

Typical Gate Charge Qg @ Vgs

72nC

Maximum Gate Source Voltage Vgs

10 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon IRFB series is the 250V single n channel strong IRFET power mosfet in a TO 220 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Industry standard through hole power package

High current rating

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Softer body diode compared to previous silicon generation

Wide portfolio available


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