Infineon HEXFET Type N-Channel MOSFET, -9.2 A, -30 V, 8-Pin SO-8 IRF9358TRPBF

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Subtotal (1 pack of 5 units)*

SGD9.48

(exc. GST)

SGD10.335

(inc. GST)

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Last RS stock
  • Final 705 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 45SGD1.896SGD9.48
50 - 95SGD1.692SGD8.46
100 - 495SGD1.346SGD6.73
500 - 1995SGD1.114SGD5.57
2000 +SGD0.862SGD4.31

*price indicative

Packaging Options:
RS Stock No.:
257-9331
Mfr. Part No.:
IRF9358TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

-9.2A

Maximum Drain Source Voltage Vds

-30V

Series

HEXFET

Package Type

SO-8

Pin Count

8

Maximum Drain Source Resistance Rds

23.8mΩ

Typical Gate Charge Qg @ Vgs

19nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the -30V dual p channel HEXFET power mosfet in a SO 8 package.

Optimized for broadest availability from distribution partners

Optimized for 4.5V gate drive voltage (called Logic level)

Capable of being driven at 2.5V gate drive voltage (called super logic level)

Reduced design complexity in high side configuration

Easier interface to microcontroller

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