Infineon HEXFET Type N-Channel MOSFET, 280 A, 30 V, 8-Pin PQFN IRFH8303TRPBF
- RS Stock No.:
- 258-3972
- Mfr. Part No.:
- IRFH8303TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD4.86
(exc. GST)
SGD5.30
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 3,998 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD2.43 | SGD4.86 |
| 10 - 98 | SGD2.09 | SGD4.18 |
| 100 - 248 | SGD1.765 | SGD3.53 |
| 250 - 498 | SGD1.705 | SGD3.41 |
| 500 + | SGD1.445 | SGD2.89 |
*price indicative
- RS Stock No.:
- 258-3972
- Mfr. Part No.:
- IRFH8303TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 280A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6mm | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Width | 5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 280A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6mm | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Width 5 mm | ||
Automotive Standard No | ||
The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Softer body-diode compared to previous silicon generation
Wide portfolio available
Increased power density
Related links
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 100 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 100 V, 8-Pin PQFN IRFH5053TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN IRFH5302TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN IRFH5301TRPBF
- Infineon HEXFET Type N-Channel MOSFET & Diode 30 V Enhancement, 8-Pin PQFN IRFH3707TRPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin PQFN