Infineon HEXFET Type N-Channel MOSFET, -9.2 A, -30 V, 8-Pin SO-8 IRF9393TRPBF
- RS Stock No.:
- 257-9338
- Mfr. Part No.:
- IRF9393TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD6.70
(exc. GST)
SGD7.30
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 7,980 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD0.67 | SGD6.70 |
| 50 - 90 | SGD0.657 | SGD6.57 |
| 100 - 490 | SGD0.516 | SGD5.16 |
| 500 - 1990 | SGD0.407 | SGD4.07 |
| 2000 + | SGD0.326 | SGD3.26 |
*price indicative
- RS Stock No.:
- 257-9338
- Mfr. Part No.:
- IRF9393TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | -9.2A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 32.5mΩ | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id -9.2A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 32.5mΩ | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the -30V p channel strong IRFET power mosfet in a SO 8 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount package
Silicon optimized for applications switching below 100 kHz
Related links
- Infineon HEXFET Type N-Channel MOSFET -30 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET -30 V, 8-Pin SO-8 IRF9358TRPBF
- Infineon HEXFET Type N-Channel MOSFET -30 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET -30 V, 8-Pin SO-8 IRF7328TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin SO-8 IRF8714TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin SO-8 IRF7862TRPBF
