Infineon HEXFET Type N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8 IRF7862TRPBF
- RS Stock No.:
- 257-9324
- Mfr. Part No.:
- IRF7862TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD8.74
(exc. GST)
SGD9.525
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 2,975 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD1.748 | SGD8.74 |
| 50 - 95 | SGD1.562 | SGD7.81 |
| 100 - 495 | SGD1.214 | SGD6.07 |
| 500 - 1995 | SGD1.006 | SGD5.03 |
| 2000 + | SGD0.794 | SGD3.97 |
*price indicative
- RS Stock No.:
- 257-9324
- Mfr. Part No.:
- IRF7862TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the 30V single n channel HEXFET power mosfet in a SO 8 package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 5V gate drive voltage (called Logic level)
Industry standard surface mount package
Capable of being wave soldered
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