Infineon Dual HEXFET 1 Type N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8 IRF8734TRPBF
- RS Stock No.:
- 215-2588
- Mfr. Part No.:
- IRF8734TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
SGD20.58
(exc. GST)
SGD22.44
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | SGD1.029 | SGD20.58 |
| 40 - 80 | SGD1.007 | SGD20.14 |
| 100 - 220 | SGD0.977 | SGD19.54 |
| 240 - 480 | SGD0.947 | SGD18.94 |
| 500 + | SGD0.918 | SGD18.36 |
*price indicative
- RS Stock No.:
- 215-2588
- Mfr. Part No.:
- IRF8734TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Height 1.5mm | ||
Width 4 mm | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Infineon HEXFET Power MOSFET series has 30V maximum drain source voltage in a SO-8 package. It has application as Synchronous MOSFET for Notebook Processor Power and Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems.
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
100% Tested for RG
Lead-Free
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