Infineon HEXFET Type N-Channel MOSFET, 79 A, 60 V TO-220
- RS Stock No.:
- 257-9267
- Mfr. Part No.:
- IRF1018ESTRLPBF
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 reel of 800 units)*
SGD800.00
(exc. GST)
SGD872.00
(inc. GST)
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In Stock
- Plus 2,400 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | SGD1.00 | SGD800.00 |
| 1600 - 2400 | SGD0.965 | SGD772.00 |
| 3200 - 5600 | SGD0.931 | SGD744.80 |
| 6400 + | SGD0.899 | SGD719.20 |
*price indicative
- RS Stock No.:
- 257-9267
- Mfr. Part No.:
- IRF1018ESTRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 79A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 8.4mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 110W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 79A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 8.4mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 110W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IRF series is the 60V single n channel HEXFET power mosfet in a D2 Pak package.
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Related links
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-220 IRF1018ESTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRF1018EPBF
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- Infineon HEXFET Type N-Channel MOSFET 60 V TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-220