Infineon HEXFET Type N-Channel MOSFET, 79 A, 60 V TO-220 IRF1018ESTRLPBF

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Subtotal (1 pack of 5 units)*

SGD10.70

(exc. GST)

SGD11.65

(inc. GST)

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Units
Per unit
Per Pack*
5 - 20SGD2.14SGD10.70
25 - 45SGD1.916SGD9.58
50 - 95SGD1.88SGD9.40
100 - 245SGD1.494SGD7.47
250 +SGD1.466SGD7.33

*price indicative

Packaging Options:
RS Stock No.:
257-9268
Mfr. Part No.:
IRF1018ESTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

79A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

8.4mΩ

Typical Gate Charge Qg @ Vgs

46nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

110W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-40-513

The Infineon IRF series is the 60V single n channel HEXFET power mosfet in a D2 Pak package.

Improved gate, avalanche and dynamic dv/dt ruggedness

Fully characterized capacitance and avalanche SOA

Enhanced body diode dV/dt and dI/dt capability

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