Infineon HEXFET Type N-Channel MOSFET, 79 A, 60 V Enhancement, 3-Pin TO-220

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Subtotal (1 pack of 5 units)*

SGD8.22

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SGD8.96

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Per Pack*
5 - 20SGD1.644SGD8.22
25 - 95SGD1.564SGD7.82
100 - 245SGD1.486SGD7.43
250 - 495SGD1.41SGD7.05
500 +SGD1.344SGD6.72

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RS Stock No.:
688-6800
Mfr. Part No.:
IRF1018EPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

79A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

8mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

46nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

110W

Maximum Operating Temperature

175°C

Width

4.83 mm

Standards/Approvals

No

Length

10.67mm

Height

9.02mm

Automotive Standard

No

Distrelec Product Id

304-43-449

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