Infineon BSD Type P-Channel MOSFET, -0.39 A, 40 V Enhancement, 6-Pin SOT-363 BSD223PH6327XTSA1
- RS Stock No.:
- 250-0521
- Mfr. Part No.:
- BSD223PH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD2.64
(exc. GST)
SGD2.88
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 1,740 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD0.264 | SGD2.64 |
| 20 - 90 | SGD0.237 | SGD2.37 |
| 100 - 240 | SGD0.215 | SGD2.15 |
| 250 - 490 | SGD0.195 | SGD1.95 |
| 500 + | SGD0.176 | SGD1.76 |
*price indicative
- RS Stock No.:
- 250-0521
- Mfr. Part No.:
- BSD223PH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -0.39A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-363 | |
| Series | BSD | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -0.39A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-363 | ||
Series BSD | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon highly innovative OptiMOS™ families include enhancement mode mosfet with Super logic level. It is avalanche and dv/dt rated. It offers fast switching. The device is Pb-free and Halogen-free. The Vds is -20 V, Rds(on) is 1.2 Ω while the Id is -0.39 A.
Consistently meet the highest quality and performance demands
Great on-state resistance and figure of merit characteristics
Related links
- Infineon BSD Type P-Channel MOSFET 40 V Enhancement, 6-Pin SOT-363
- Infineon BSD Type N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363
- Infineon BSD Type N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363 BSD316SNH6327XTSA1
- DiodesZetex Dual 2 Type P-Channel MOSFET 6-Pin SOT-363
- Infineon BSV Type P-Channel MOSFET 40 V Enhancement, 6-Pin SOT-363
- Infineon BSV Type P-Channel MOSFET 40 V Enhancement, 6-Pin SOT-363 BSV236SPH6327XTSA1
- DiodesZetex 2 Type N 4.6 A 6-Pin SOT-363
- Vishay TrenchFET Type P-Channel Power MOSFET 30 V Enhancement, 6-Pin SOT-363