Infineon BSD Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 6-Pin SOT-363 BSD316SNH6327XTSA1
- RS Stock No.:
- 258-0699
- Mfr. Part No.:
- BSD316SNH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD2.88
(exc. GST)
SGD3.14
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 15,810 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD0.288 | SGD2.88 |
| 20 - 90 | SGD0.214 | SGD2.14 |
| 100 - 240 | SGD0.134 | SGD1.34 |
| 250 - 490 | SGD0.092 | SGD0.92 |
| 500 + | SGD0.072 | SGD0.72 |
*price indicative
- RS Stock No.:
- 258-0699
- Mfr. Part No.:
- BSD316SNH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-363 | |
| Series | BSD | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.9mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Width | 1.25 mm | |
| Length | 2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-363 | ||
Series BSD | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 175°C | ||
Height 0.9mm | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Width 1.25 mm | ||
Length 2mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon N-channel small signal MOSFET automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
Enhancement mode
Logic level
Avalanche rated
Fast switching
Dv/dt rated
Low RDS(on) provides higher efficiency and extends battery life
Small packages save PCB space
Best-in-class quality and reliability
Related links
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- Infineon BSV Type P-Channel MOSFET 40 V Enhancement, 6-Pin SOT-363