Infineon BSV Type P-Channel MOSFET, -1.5 A, 40 V Enhancement, 6-Pin SOT-363
- RS Stock No.:
- 250-0561
- Mfr. Part No.:
- BSV236SPH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 250-0561
- Mfr. Part No.:
- BSV236SPH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -1.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSV | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -1.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSV | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P is a Small-Signal-Transistor which is P-channel in Enhancement mode. The Super Logic Level (2.5 V rated). It is Avalanche rated and dv/dt rated.
VDS is 20 V, Rds(on) is 175 mΩ and Id is 1.5 A
150°C operating temperature
Maximum power dissipation is 560mW
Related links
- Infineon BSV Type P-Channel MOSFET 40 V Enhancement, 6-Pin SOT-363 BSV236SPH6327XTSA1
- Infineon BSD Type P-Channel MOSFET 40 V Enhancement, 6-Pin SOT-363
- Infineon BSD Type P-Channel MOSFET 40 V Enhancement, 6-Pin SOT-363 BSD223PH6327XTSA1
- Infineon BSD235C 2 Type N 0.95 A 6-Pin SOT-363
- Infineon BSD235C 2 Type N 0.95 A 6-Pin SOT-363 BSD235CH6327XTSA1
- DiodesZetex Dual 2 Type P-Channel MOSFET 6-Pin SOT-363
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMP31 1 Type P-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363