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Datasheet - MSC080SMA330B4

The Microship's silicon carbide (SiC) power MOSFET product line increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The device is a 3300 V, 80 mΩ SiC MOSFET in a TO-247 4-lead package with a source sense. It has low capacitances and low gate charge with fast switching speed due to low internal gate resistance (ESR). It allows stable operation at high junction temperature, TJ(max) of 150°C. It is fast and reliable body diode with superior avalanche ruggedness.

High efficiency to enable lighter, more compact system
Simple to drive and easy to parallel
Improved thermal capabilities and lower switching losses

Select all	Attribute	Value
	Brand	Microchip
	Channel Type	N
	Maximum Continuous Drain Current	41 A
	Maximum Drain Source Voltage	3300 V
	Package Type	TO-247
	Mounting Type	Through Hole

	Select all
	Brand Microchip
	Channel Type N
	Maximum Continuous Drain Current 41 A
	Maximum Drain Source Voltage 3300 V
	Package Type TO-247
	Mounting Type Through Hole

Microchip N-Channel MOSFET, 41 A, 3300 V TO-247 MSC080SMA330B4

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