Vishay MaxSiC N-Channel MOSFET, 41 A, 1.2 kV N, 4-Pin TO-247AD MXPQ120A063SL-GE3

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1 - 4SGD22.89
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RS Stock No.:
790-414
Mfr. Part No.:
MXPQ120A063SL-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

41A

Maximum Drain Source Voltage Vds

1.2kV

Package Type

TO-247AD

Series

MaxSiC

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

63mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

61nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

205W

Forward Voltage Vf

4.8V

Maximum Gate Source Voltage Vgs

22V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Width

16.13mm

Length

23.6mm

Height

5.21mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The Vishay 1200 V N-Channel SiC MOSFET is a high-performance switching device designed to enhance efficiency in various power applications.

Fast switching speed optimises operational performance

Short circuit withstand time of 3 μs enhances reliability

AEC-Q101 qualified for automotive applications

Low on-state resistance of 63 mΩ ensures minimal power loss

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