Vishay IRFP150 Type N-Channel MOSFET, 41 A, 100 V Enhancement, 3-Pin TO-247 IRFP150PBF
- RS Stock No.:
- 815-2746
- Mfr. Part No.:
- IRFP150PBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD25.41
(exc. GST)
SGD27.695
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- 15 left, ready to ship from another location
- Final 230 unit(s) shipping from 06 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD5.082 | SGD25.41 |
| 25 - 95 | SGD4.538 | SGD22.69 |
| 100 - 245 | SGD4.25 | SGD21.25 |
| 250 - 495 | SGD4.166 | SGD20.83 |
| 500 + | SGD4.082 | SGD20.41 |
*price indicative
- RS Stock No.:
- 815-2746
- Mfr. Part No.:
- IRFP150PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 41A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IRFP150 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 55mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Power Dissipation Pd | 230W | |
| Forward Voltage Vf | 2.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Width | 5.31 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 41A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IRFP150 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 55mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Power Dissipation Pd 230W | ||
Forward Voltage Vf 2.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 15.87mm | ||
Height 20.82mm | ||
Width 5.31 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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