Infineon IPD N-Channel MOSFET, 180 A, 40 V P, 3-Pin TO-252 IPD80R1K2P7ATMA1

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Subtotal (1 pack of 5 units)*

SGD10.22

(exc. GST)

SGD11.14

(inc. GST)

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Units
Per unit
Per Pack*
5 - 5SGD2.044SGD10.22
10 - 95SGD1.942SGD9.71
100 - 245SGD1.846SGD9.23
250 - 495SGD1.756SGD8.78
500 +SGD1.664SGD8.32

*price indicative

Packaging Options:
RS Stock No.:
244-1596
Mfr. Part No.:
IPD80R1K2P7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

P

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

Best-in-class FOM RDS(on) * Eoss

Best-in-class DPAK RDS(on)

Best-in-class V(GS)th of 3V

Fully optimized portfolio

Integrated Zener Diode ESD protection

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