Infineon IPD Type N-Channel MOSFET, 180 A, 40 V P, 3-Pin TO-252 IPD5N25S3430ATMA1

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Subtotal (1 pack of 5 units)*

SGD12.48

(exc. GST)

SGD13.605

(inc. GST)

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Per unit
Per Pack*
5 - 5SGD2.496SGD12.48
10 - 95SGD2.374SGD11.87
100 - 245SGD2.254SGD11.27
250 - 495SGD2.134SGD10.67
500 +SGD2.03SGD10.15

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Packaging Options:
RS Stock No.:
244-1594
Mfr. Part No.:
IPD5N25S3430ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

P

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET OptiMOSTM Power Transistor is a Green product RoHS compliant and is Automotive AEC Q101 qualified.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

100% Avalanche tested

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